Wide-Gap Thin Film Si n-i-p Solar Cells Deposited by Hot-Wire CVD: Preprint

    Research output: Contribution to conferencePaper


    High-voltage wide bandgap thin-film Si n-i-p solar cells have been made using the hot-wire chemical vapor deposition (HWCVD) technique. The best open-circuit voltage (Voc) has exceeded 0.94 V in solar cells using HWCVD in the entire n-i-p structure. A Voc of 0.97V has been achieved using HWCVD in the n and i layers and plasma-enhanced (PE) CVD for the p layer. The high voltages are attributed tothe wide-gap i layer and an improved p/i interface. The wide-gap i layer is obtained by using low substrate temperatures and sufficient hydrogen dilution during the growth of the i layer to arrive at the amorphous-to-microcrystalline phase transition region. The optical band gap (E04) of the i layer is found to be 1.90 eV. These high-voltage cells also exhibit good fill factors exceeding 0.7with short-circuit-current densities of 8 to 10 mA/cm2 on bare stainless steel substrates. We have also carried out photoluminescence (PL) spectroscopy studies and found a correlation between Voc and the PL peak energy position.
    Original languageAmerican English
    Number of pages7
    StatePublished - 2002
    Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
    Duration: 20 May 200224 May 2002


    Conference29th IEEE PV Specialists Conference
    CityNew Orleans, Louisiana

    Bibliographical note

    Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

    NREL Publication Number

    • NREL/CP-520-31474


    • hot-wire chemical vapor deposition (HWCVD)
    • open circuit voltage
    • photoluminescence (PL)
    • plasma-enhanced (PE)
    • PV
    • short-circuit-current densities
    • wide-gap thin film


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