Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

Ingrid Repins; Lorelle Mansfield; Darius Kuciauskas; Stephen Glynn; Teresa Barnes; Wyatt Metzger; Chun Sheng Jiang; Patricia Dippo; Glenn Teeter; Andriy Zakutayev; Stephan Lany; Brian Egaas; Pawel Zawadzki; Suhuai Wei; Craig Perkins; Steven Harvey; Jan-Hendrik Alsmeier; Thomas Lussky; Lars Korte; Regan Wilks; Marcus Bar; Ana Kanevce; James Burst; Ji-Sang Park

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

Ingrid Repins, Lorelle Mansfield, Darius Kuciauskas, Stephen Glynn, Teresa Barnes, Wyatt Metzger, Chun Sheng Jiang, Patricia Dippo, Glenn Teeter, Andriy Zakutayev, Stephan Lany, Brian Egaas, Pawel Zawadzki, Suhuai Wei, Craig Perkins, Steven Harvey, Jan-Hendrik Alsmeier, Thomas Lussky, Lars Korte, Regan WilksMarcus Bar, Ana Kanevce, James Burst, Ji-Sang Park

Helmholtz-Zentrum Berlin

Research output: Contribution to conference › Paper

Abstract

Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

Original language	American English
Number of pages	9
State	Published - 2016
Event	43rd IEEE Photovoltaic Specialists Conference - Portland, Oregon Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference
City	Portland, Oregon
Period	5/06/16 → 10/06/16

NREL Publication Number

NREL/CP-5J00-65682

Keywords

band gap
CdTe
chalcogen
CIGS
kesterite
potential fluctuation

Access to Document

https://www.nrel.gov/docs/fy16osti/65682.pdf

Cite this

Repins, I., Mansfield, L., Kuciauskas, D., Glynn, S., Barnes, T., Metzger, W., Jiang, C. S., Dippo, P., Teeter, G., Zakutayev, A., Lany, S., Egaas, B., Zawadzki, P., Wei, S., Perkins, C., Harvey, S., Alsmeier, J.-H., Lussky, T., Korte, L., ... Park, J.-S. (2016). Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint. Paper presented at 43rd IEEE Photovoltaic Specialists Conference, Portland, Oregon. https://www.nrel.gov/docs/fy16osti/65682.pdf

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title = "Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint",

abstract = "Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.",

keywords = "band gap, CdTe, chalcogen, CIGS, kesterite, potential fluctuation",

author = "Ingrid Repins and Lorelle Mansfield and Darius Kuciauskas and Stephen Glynn and Teresa Barnes and Wyatt Metzger and Jiang, {Chun Sheng} and Patricia Dippo and Glenn Teeter and Andriy Zakutayev and Stephan Lany and Brian Egaas and Pawel Zawadzki and Suhuai Wei and Craig Perkins and Steven Harvey and Jan-Hendrik Alsmeier and Thomas Lussky and Lars Korte and Regan Wilks and Marcus Bar and Ana Kanevce and James Burst and Ji-Sang Park",

year = "2016",

language = "American English",

note = "43rd IEEE Photovoltaic Specialists Conference ; Conference date: 05-06-2016 Through 10-06-2016",

}

Repins, I , Mansfield, L , Kuciauskas, D , Glynn, S , Barnes, T, Metzger, W, Jiang, CS, Dippo, P, Teeter, G , Zakutayev, A , Lany, S, Egaas, B, Zawadzki, P, Wei, S, Perkins, C , Harvey, S, Alsmeier, J-H, Lussky, T, Korte, L, Wilks, R, Bar, M, Kanevce, A, Burst, J & Park, J-S 2016, 'Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint', Paper presented at 43rd IEEE Photovoltaic Specialists Conference, Portland, Oregon, 5/06/16 - 10/06/16. <https://www.nrel.gov/docs/fy16osti/65682.pdf>

TY - CONF

T1 - Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

AU - Repins, Ingrid

AU - Mansfield, Lorelle

AU - Kuciauskas, Darius

AU - Glynn, Stephen

AU - Barnes, Teresa

AU - Metzger, Wyatt

AU - Jiang, Chun Sheng

AU - Dippo, Patricia

AU - Teeter, Glenn

AU - Zakutayev, Andriy

AU - Lany, Stephan

AU - Egaas, Brian

AU - Zawadzki, Pawel

AU - Wei, Suhuai

AU - Perkins, Craig

AU - Harvey, Steven

AU - Alsmeier, Jan-Hendrik

AU - Lussky, Thomas

AU - Korte, Lars

AU - Wilks, Regan

AU - Bar, Marcus

AU - Kanevce, Ana

AU - Burst, James

AU - Park, Ji-Sang

PY - 2016

Y1 - 2016

N2 - Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

AB - Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

KW - band gap

KW - CdTe

KW - chalcogen

KW - CIGS

KW - kesterite

KW - potential fluctuation

M3 - Paper

T2 - 43rd IEEE Photovoltaic Specialists Conference

Y2 - 5 June 2016 through 10 June 2016

ER -

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

Abstract

Conference

NREL Publication Number

Keywords

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Cite this