Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices

Ingrid Repins; Lorelle Mansfield; Ana Kanevce; Soren A. Jensen; Darius Kuciauskas; Stephen Glynn; Teresa Barnes; Wyatt Metzger; James Burst; Chun Sheng Jiang; Patricia Dippo; Steve Harvey; Glenn Teeter; C. Perkins; Brian Egaas; Andriy Zakutayev; Jan Hendrik Alsmeier; Thomas Lusky; Lars Korte; Regan G. Wilks; Marcus Bar; Yanfa Yan; Stephan Lany; Pawel Zawadzki; Ji Sang Park; Suhuai Wei

doi:10.1109/PVSC.2016.7749600

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices

Ingrid Repins, Lorelle Mansfield, Ana Kanevce, Soren A. Jensen, Darius Kuciauskas, Stephen Glynn, Teresa Barnes, Wyatt Metzger, James Burst, Chun Sheng Jiang, Patricia Dippo, Steve Harvey, Glenn Teeter, C. Perkins, Brian Egaas, Andriy Zakutayev, Jan Hendrik Alsmeier, Thomas Lusky, Lars Korte, Regan G. WilksMarcus Bar, Yanfa Yan, Stephan Lany, Pawel Zawadzki, Ji Sang Park, Suhuai Wei

Research output: Contribution to conference › Paper › peer-review

17 Scopus Citations

Abstract

Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu₂SnS₃, CuSbS₂), considering differences in materials properties, is examined.

Original language	American English
Pages	309-314
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2016.7749600 https://doi.org/10.1109/PVSC.2016.7749600
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

See NREL/CP-5J00-65682 for preprint

NREL Publication Number

NREL/CP-5J00-67966

Keywords

CAS
CdTe
CIGS
CTS
CZTS
defect
fluctuations
grading

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Repins, I., Mansfield, L., Kanevce, A., Jensen, S. A., Kuciauskas, D., Glynn, S., Barnes, T., Metzger, W., Burst, J., Jiang, C. S., Dippo, P., Harvey, S., Teeter, G., Perkins, C., Egaas, B., Zakutayev, A., Alsmeier, J. H., Lusky, T., Korte, L., ... Wei, S. (2016). Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices. 309-314. Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States. https://doi.org/10.1109/PVSC.2016.7749600, https://doi.org/10.1109/PVSC.2016.7749600

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title = "Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices",

abstract = "Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.",

keywords = "CAS, CdTe, CIGS, CTS, CZTS, defect, fluctuations, grading",

author = "Ingrid Repins and Lorelle Mansfield and Ana Kanevce and Jensen, {Soren A.} and Darius Kuciauskas and Stephen Glynn and Teresa Barnes and Wyatt Metzger and James Burst and Jiang, {Chun Sheng} and Patricia Dippo and Steve Harvey and Glenn Teeter and C. Perkins and Brian Egaas and Andriy Zakutayev and Alsmeier, {Jan Hendrik} and Thomas Lusky and Lars Korte and Wilks, {Regan G.} and Marcus Bar and Yanfa Yan and Stephan Lany and Pawel Zawadzki and Park, {Ji Sang} and Suhuai Wei",

note = "See NREL/CP-5J00-65682 for preprint; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7749600",

language = "American English",

pages = "309--314",

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Repins, I , Mansfield, L, Kanevce, A, Jensen, SA, Kuciauskas, D , Glynn, S , Barnes, T, Metzger, W, Burst, J, Jiang, CS, Dippo, P, Harvey, S , Teeter, G , Perkins, C, Egaas, B, Zakutayev, A, Alsmeier, JH, Lusky, T, Korte, L, Wilks, RG, Bar, M, Yan, Y, Lany, S, Zawadzki, P, Park, JS & Wei, S 2016, 'Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices', Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16 - 10/06/16 pp. 309-314. https://doi.org/10.1109/PVSC.2016.7749600, https://doi.org/10.1109/PVSC.2016.7749600

TY - CONF

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AU - Repins, Ingrid

AU - Mansfield, Lorelle

AU - Kanevce, Ana

AU - Jensen, Soren A.

AU - Kuciauskas, Darius

AU - Glynn, Stephen

AU - Barnes, Teresa

AU - Metzger, Wyatt

AU - Burst, James

AU - Jiang, Chun Sheng

AU - Dippo, Patricia

AU - Harvey, Steve

AU - Teeter, Glenn

AU - Perkins, C.

AU - Egaas, Brian

AU - Zakutayev, Andriy

AU - Alsmeier, Jan Hendrik

AU - Lusky, Thomas

AU - Korte, Lars

AU - Wilks, Regan G.

AU - Bar, Marcus

AU - Yan, Yanfa

AU - Lany, Stephan

AU - Zawadzki, Pawel

AU - Park, Ji Sang

AU - Wei, Suhuai

N1 - See NREL/CP-5J00-65682 for preprint

PY - 2016/11/18

Y1 - 2016/11/18

N2 - Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.

AB - Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.

KW - CAS

KW - CdTe

KW - CIGS

KW - CTS

KW - CZTS

KW - defect

KW - fluctuations

KW - grading

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U2 - 10.1109/PVSC.2016.7749600

DO - 10.1109/PVSC.2016.7749600

M3 - Paper

AN - SCOPUS:85003633072

SP - 309

EP - 314

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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