Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low Temperature

Jian Hu; Howard M. Branz; Paul Stradins; Scott Ward; Anna Duda; Qi Wang; Craig Perlov; Warren B. Jackson; Carl Taussig

doi:10.1109/LED.2004.839218

Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low Temperature

Jian Hu, Howard M. Branz, Paul Stradins, Scott Ward, Anna Duda, Qi Wang, Craig Perlov, Warren B. Jackson, Carl Taussig

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

A write-once programmable memory element is based on a spin-coated sol-gel silica antifuse layer cured at 100 °C. This antifuse is integrated with a thin-film silicon diode deposited at 160 °C by hot-wire chemical vapor deposition. When a 3 to 5 V electrical pulse is applied across a diode/antifuse element, the silica breaks down suddenly and the current passing through the element increases irreversibly by more than about 10⁴. The on-state exhibits a diode-like current-voltage characteristic with a forward-reverse asymmetry of nearly 100 at 1 V and is stable if there was hexamethyldisilazane treatment of the wet-gel film before curing.

Original language	American English
Pages (from-to)	17-19
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	1
DOIs	https://doi.org/10.1109/LED.2004.839218 https://doi.org/10.1109/LED.2004.839218
State	Published - 2005

NREL Publication Number

NREL/JA-520-37974

Keywords

Antifuse
Electronic memory switching
Sol-gel made silica
Thin-film diode

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@article{c83c53dbcd324e03b93631965136ca97,

title = "Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low Temperature",

abstract = "A write-once programmable memory element is based on a spin-coated sol-gel silica antifuse layer cured at 100 °C. This antifuse is integrated with a thin-film silicon diode deposited at 160 °C by hot-wire chemical vapor deposition. When a 3 to 5 V electrical pulse is applied across a diode/antifuse element, the silica breaks down suddenly and the current passing through the element increases irreversibly by more than about 104. The on-state exhibits a diode-like current-voltage characteristic with a forward-reverse asymmetry of nearly 100 at 1 V and is stable if there was hexamethyldisilazane treatment of the wet-gel film before curing.",

keywords = "Antifuse, Electronic memory switching, Sol-gel made silica, Thin-film diode",

author = "Jian Hu and Branz, {Howard M.} and Paul Stradins and Scott Ward and Anna Duda and Qi Wang and Craig Perlov and Jackson, {Warren B.} and Carl Taussig",

year = "2005",

doi = "10.1109/LED.2004.839218",

language = "American English",

volume = "26",

pages = "17--19",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low Temperature

AU - Hu, Jian

AU - Branz, Howard M.

AU - Stradins, Paul

AU - Ward, Scott

AU - Duda, Anna

AU - Wang, Qi

AU - Perlov, Craig

AU - Jackson, Warren B.

AU - Taussig, Carl

PY - 2005

Y1 - 2005

N2 - A write-once programmable memory element is based on a spin-coated sol-gel silica antifuse layer cured at 100 °C. This antifuse is integrated with a thin-film silicon diode deposited at 160 °C by hot-wire chemical vapor deposition. When a 3 to 5 V electrical pulse is applied across a diode/antifuse element, the silica breaks down suddenly and the current passing through the element increases irreversibly by more than about 104. The on-state exhibits a diode-like current-voltage characteristic with a forward-reverse asymmetry of nearly 100 at 1 V and is stable if there was hexamethyldisilazane treatment of the wet-gel film before curing.

AB - A write-once programmable memory element is based on a spin-coated sol-gel silica antifuse layer cured at 100 °C. This antifuse is integrated with a thin-film silicon diode deposited at 160 °C by hot-wire chemical vapor deposition. When a 3 to 5 V electrical pulse is applied across a diode/antifuse element, the silica breaks down suddenly and the current passing through the element increases irreversibly by more than about 104. The on-state exhibits a diode-like current-voltage characteristic with a forward-reverse asymmetry of nearly 100 at 1 V and is stable if there was hexamethyldisilazane treatment of the wet-gel film before curing.

KW - Antifuse

KW - Electronic memory switching

KW - Sol-gel made silica

KW - Thin-film diode

UR - http://www.scopus.com/inward/record.url?scp=12444331032&partnerID=8YFLogxK

U2 - 10.1109/LED.2004.839218

DO - 10.1109/LED.2004.839218

M3 - Article

AN - SCOPUS:12444331032

SN - 0741-3106

VL - 26

SP - 17

EP - 19

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -

Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low Temperature

Abstract

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Keywords

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