Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low Temperature

Jian Hu; Howard M. Branz; Paul Stradins; Scott Ward; Anna Duda; Qi Wang; Craig Perlov; Warren B. Jackson; Carl Taussig

doi:10.1109/LED.2004.839218

Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low Temperature

Jian Hu
, Howard M. Branz
, Paul Stradins
, Scott Ward
, Anna Duda
, Qi Wang
, Craig Perlov
, Warren B. Jackson
, Carl Taussig

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

A write-once programmable memory element is based on a spin-coated sol-gel silica antifuse layer cured at 100 °C. This antifuse is integrated with a thin-film silicon diode deposited at 160 °C by hot-wire chemical vapor deposition. When a 3 to 5 V electrical pulse is applied across a diode/antifuse element, the silica breaks down suddenly and the current passing through the element increases irreversibly by more than about 10⁴. The on-state exhibits a diode-like current-voltage characteristic with a forward-reverse asymmetry of nearly 100 at 1 V and is stable if there was hexamethyldisilazane treatment of the wet-gel film before curing.

Original language	American English
Pages (from-to)	17-19
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	1
DOIs	https://doi.org/10.1109/LED.2004.839218 https://doi.org/10.1109/LED.2004.839218
State	Published - 2005

NLR Publication Number

NREL/JA-520-37974

Keywords

Antifuse
Electronic memory switching
Sol-gel made silica
Thin-film diode

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title = "Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low Temperature",

abstract = "A write-once programmable memory element is based on a spin-coated sol-gel silica antifuse layer cured at 100 °C. This antifuse is integrated with a thin-film silicon diode deposited at 160 °C by hot-wire chemical vapor deposition. When a 3 to 5 V electrical pulse is applied across a diode/antifuse element, the silica breaks down suddenly and the current passing through the element increases irreversibly by more than about 104. The on-state exhibits a diode-like current-voltage characteristic with a forward-reverse asymmetry of nearly 100 at 1 V and is stable if there was hexamethyldisilazane treatment of the wet-gel film before curing.",

keywords = "Antifuse, Electronic memory switching, Sol-gel made silica, Thin-film diode",

author = "Jian Hu and Branz, \{Howard M.\} and Paul Stradins and Scott Ward and Anna Duda and Qi Wang and Craig Perlov and Jackson, \{Warren B.\} and Carl Taussig",

year = "2005",

doi = "10.1109/LED.2004.839218",

language = "American English",

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T1 - Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low Temperature

AU - Hu, Jian

AU - Branz, Howard M.

AU - Stradins, Paul

AU - Ward, Scott

AU - Duda, Anna

AU - Wang, Qi

AU - Perlov, Craig

AU - Jackson, Warren B.

AU - Taussig, Carl

PY - 2005

Y1 - 2005

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AB - A write-once programmable memory element is based on a spin-coated sol-gel silica antifuse layer cured at 100 °C. This antifuse is integrated with a thin-film silicon diode deposited at 160 °C by hot-wire chemical vapor deposition. When a 3 to 5 V electrical pulse is applied across a diode/antifuse element, the silica breaks down suddenly and the current passing through the element increases irreversibly by more than about 104. The on-state exhibits a diode-like current-voltage characteristic with a forward-reverse asymmetry of nearly 100 at 1 V and is stable if there was hexamethyldisilazane treatment of the wet-gel film before curing.

KW - Antifuse

KW - Electronic memory switching

KW - Sol-gel made silica

KW - Thin-film diode

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DO - 10.1109/LED.2004.839218

M3 - Article

AN - SCOPUS:12444331032

SN - 0741-3106

VL - 26

SP - 17

EP - 19

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -

Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low Temperature

Abstract

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Keywords

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