Abstract
Temperature-programmed x-ray photoelectron spectroscopy (TP-XPS) and ultraviolet photoelectron spectroscopy (UPS) measurements of CdTe(111)-B are used to probe changes to the surface electronic structure that accompany heavy Cu dopant levels and Cux Te precipitation. UPS measurements reveal that the ionization potential of the heavily Cu-doped substrate is only slightly smaller than that of the undoped material. Also, temperature-reversible Cux Te precipitation is observed, which lowers the ionization potential of the surface from 5.7 eV to 4.8 eV. These results suggest that interfacial Cux Te precipitation might play a key role in ohmic-contact formation in CdTe-based photovoltaic devices.
Original language | American English |
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Article number | Article No. 034504 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 102 |
Issue number | 3 |
DOIs | |
State | Published - 2007 |
NREL Publication Number
- NREL/JA-520-42157