X-ray Photoelectron Spectroscopy Study of Al- and N- Co-Doped p-Type ZnO Thin Films

G. D. Yuan; Z. Z. Ye; J. Y. Huang; Z. P. Zhu; C. L. Perkins; S. B. Zhang

doi:10.1016/j.jcrysgro.2009.01.128

X-ray Photoelectron Spectroscopy Study of Al- and N- Co-Doped p-Type ZnO Thin Films

G. D. Yuan, Z. Z. Ye, J. Y. Huang, Z. P. Zhu, C. L. Perkins, S. B. Zhang

Materials Science

Research output: Contribution to journal › Article › peer-review

16 Scopus Citations

Abstract

The chemical state of nitrogen, aluminum, oxygen and zinc in Al-N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N_1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al-N_O-H species, and the lower one perhaps derive from the (NH₂)^- cluster for the ammonia introduction. These two peaks both contribute to the p-type behavior in the ZnO films. A symmetry 74.4 eV binding energy in Al_2p3/2 photoelectron peaks revealed an Al-N bonding state, a key factor to the co-doping method.

Original language	American English
Pages (from-to)	2341-2344
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	8
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.01.128 https://doi.org/10.1016/j.jcrysgro.2009.01.128
State	Published - 2009

NREL Publication Number

NREL/JA-520-46136

Keywords

A1. Electrical properties
A1. X-ray photoelectron spectroscopy
A1. ZnO
Al- and N- co-doping

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title = "X-ray Photoelectron Spectroscopy Study of Al- and N- Co-Doped p-Type ZnO Thin Films",

abstract = "The chemical state of nitrogen, aluminum, oxygen and zinc in Al-N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al-NO-H species, and the lower one perhaps derive from the (NH2)- cluster for the ammonia introduction. These two peaks both contribute to the p-type behavior in the ZnO films. A symmetry 74.4 eV binding energy in Al2p3/2 photoelectron peaks revealed an Al-N bonding state, a key factor to the co-doping method.",

keywords = "A1. Electrical properties, A1. X-ray photoelectron spectroscopy, A1. ZnO, Al- and N- co-doping",

author = "Yuan, {G. D.} and Ye, {Z. Z.} and Huang, {J. Y.} and Zhu, {Z. P.} and Perkins, {C. L.} and Zhang, {S. B.}",

year = "2009",

doi = "10.1016/j.jcrysgro.2009.01.128",

language = "American English",

volume = "311",

pages = "2341--2344",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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T1 - X-ray Photoelectron Spectroscopy Study of Al- and N- Co-Doped p-Type ZnO Thin Films

AU - Yuan, G. D.

AU - Ye, Z. Z.

AU - Huang, J. Y.

AU - Zhu, Z. P.

AU - Perkins, C. L.

AU - Zhang, S. B.

PY - 2009

Y1 - 2009

N2 - The chemical state of nitrogen, aluminum, oxygen and zinc in Al-N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al-NO-H species, and the lower one perhaps derive from the (NH2)- cluster for the ammonia introduction. These two peaks both contribute to the p-type behavior in the ZnO films. A symmetry 74.4 eV binding energy in Al2p3/2 photoelectron peaks revealed an Al-N bonding state, a key factor to the co-doping method.

AB - The chemical state of nitrogen, aluminum, oxygen and zinc in Al-N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al-NO-H species, and the lower one perhaps derive from the (NH2)- cluster for the ammonia introduction. These two peaks both contribute to the p-type behavior in the ZnO films. A symmetry 74.4 eV binding energy in Al2p3/2 photoelectron peaks revealed an Al-N bonding state, a key factor to the co-doping method.

KW - A1. Electrical properties

KW - A1. X-ray photoelectron spectroscopy

KW - A1. ZnO

KW - Al- and N- co-doping

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U2 - 10.1016/j.jcrysgro.2009.01.128

DO - 10.1016/j.jcrysgro.2009.01.128

M3 - Article

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SN - 0022-0248

VL - 311

SP - 2341

EP - 2344

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 8

ER -

X-ray Photoelectron Spectroscopy Study of Al- and N- Co-Doped p-Type ZnO Thin Films

Abstract

NREL Publication Number

Keywords

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