X-ray Photoemission Analysis of Chemically Treated I-III-VI Semiconductor Surfaces

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Abstract

Device-grade thin-film CuInSe2 was subjected to various chemical treatments commonly used in photovoltaic device fabrication to determine the resulting microscopic surface composition/morphology and the effect of II-VI CuInSe2 heterojunction formation. HCI (38%), Br-MeOH (,1% Br), (NH4)2S and NH4OH/thiourea solutions were used separately to modify the surface chemistry of the CuInSe2polycrystalline films. Scanning electron microscopy was used to evaluate the resultant surface morphology. Angle-resolved high-resolution photoemission measurements on the valence band electronic structure and Cu 2p, In 3d, Ga 2p, and Se 3d core lines were used to evaluate the chemistry of the chemically treated surfaces. CdS overlayers were then deposited on these chemically treated surfaces.Photoemission measurements were acquired to determine the resultant heterojunction valence-band discontinuity between the CdS and the chemically modified CuInSe2 surface.
Original languageAmerican English
Pages (from-to)2058-2062
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume15
Issue number4
DOIs
StatePublished - 1997

NREL Publication Number

  • NREL/JA-520-24285

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