XPS and UPS Investigation of NH4OH-Exposed Cu(In,Ga)Se2 Thin Films

    Research output: Contribution to conferencePaper

    Abstract

    Photoelectron spectroscopy was used to determine the compositional and electronic changes occurring in Cu(In,Ga)Se2 thin films as a result of immersion in aqueous ammonia solution. We find that NH4OH-treated CIGS surfaces are preferentially etched of indium and gallium, resulting in the formation of a thin layer of a degenerate Cu-Se compound that we tentatively identify as Cu2Se. The workfunction of ammonia-treated samples is found to increase by 0.6 eV relative to as-grown CIGS thin films. The uniformity of chemical bath effects (etching & deposition) was found to be improved by the addition to the bath of a non-ionic surfactant. Initial device results show that the new surfactant-based chemical bath deposition (CBD) method may lead to better and thinner CdS buffer layers.
    Original languageAmerican English
    Number of pages7
    StatePublished - 2005
    Event31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida
    Duration: 3 Jan 20057 Jan 2005

    Conference

    Conference31st IEEE Photovoltaics Specialists Conference and Exhibition
    CityLake Buena Vista, Florida
    Period3/01/057/01/05

    NREL Publication Number

    • NREL/CP-520-37419

    Keywords

    • buffer layers
    • chemical bath deposition (CBD)
    • deposition
    • etching
    • gallium
    • indium
    • non-ionic surfactant
    • PV
    • thin films

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