Abstract
Photoelectron spectroscopy was used to determine the compositional and electronic changes occurring in Cu(In,Ga)Se2 thin films as a result of immersion in aqueous ammonia solution. We find that NH4OH-treated CIGS surfaces are preferentially etched of indium and gallium, resulting in the formation of a thin layer of a degenerate Cu-Se compound that we tentatively identify as Cu2Se. The workfunction of ammonia-treated samples is found to increase by 0.6 eV relative to as-grown CIGS thin films. The uniformity of chemical bath effects (etching & deposition) was found to be improved by the addition to the bath of a non-ionic surfactant. Initial device results show that the new surfactant-based chemical bath deposition (CBD) method may lead to better and thinner CdS buffer layers.
Original language | American English |
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Number of pages | 7 |
State | Published - 2005 |
Event | 31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida Duration: 3 Jan 2005 → 7 Jan 2005 |
Conference
Conference | 31st IEEE Photovoltaics Specialists Conference and Exhibition |
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City | Lake Buena Vista, Florida |
Period | 3/01/05 → 7/01/05 |
NREL Publication Number
- NREL/CP-520-37419
Keywords
- buffer layers
- chemical bath deposition (CBD)
- deposition
- etching
- gallium
- indium
- non-ionic surfactant
- PV
- thin films