Abstract
We report X-ray Photoelectron spectroscopy (XPS) studies of device-quality CIGS thin films grown on soda-lime glass substrates. The copper atomic concentration profiles within the near-surface region indicate copper depletion, a previously reported observation attributed to the formation of the ternary defect compound Cu(In,Ga)3Se5[1]. Preferential surface segregation of sodium is also observed,as previously reported [2]. Analyses of our data indicate that the group [1]/[111] atomic concentration ratio {[Cu]+[Na]}/{[In]+[Ga]} is constant to within the accuracy of the measurement. This result is strong evidence that the composition of CIGS films grown by multisource physical vapor deposition in the presence of sodium is thermochemically constrained to lie on the pseudobinaryNa(In,Ga)Se2--Cu(In,Ga)Se2 tie-line in the ternary Na2Se--Cu2Se--(In,Ga)2Se3 composition diagram.
Original language | American English |
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Pages | 499-502 |
Number of pages | 4 |
DOIs | |
State | Published - 1997 |
Event | Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997 |
Conference
Conference | Twenty Sixth IEEE Photovoltaic Specialists Conference |
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City | Anaheim, California |
Period | 29/09/97 → 3/10/97 |
Bibliographical note
Work performed by University of Florida, Gainesville, FloridaNREL Publication Number
- NREL/CP-520-24975