Yield Analysis and Comparison of GaInP/Si and GaInP/GaAs Multi-Terminal Tandem Solar Cells

We present a yield analysis of tandem devices consisting of GaInP top cells on Si or GaAs bottom cells with different terminal configurations. Inputs are the I-V and external quantum efficiency of the individual subcells and the irradiance-dependent module temperature of the bottom cell. Our model calculates the temperature of the tandem module by taking into account the performance, spectral working range and luminescent coupling of the different tandem devices, enabling an irradiance- and weather-dependent yield analysis for these modules. We apply the model to compare two types of two junction devices, a GaInP/GaAs monolithically grown tandem device, and a GaInP top cell stacked on a Si bottom cell, the present two best dual junction devices. When the subcells are series connected both technologies perform equally well. The performance of the GaInP/Si can be significantly improved relatively by 5.8% using 3-terminal (3T) devices with a back-contacted bottom cell instead of a 2T configuration, showing a possible benefit when using Si back contacted cells. For GaInP/Si, the 3T-device works as well as the 4T-device, enabling the integration of monolithic tandem cells into modules at comparably high efficiencies.