Abstract
Using the first principles band-structure method, we studied systematically the stability and electronic structure of CdX (X=S, Se, and Te) semiconductors with the zinc-blende (ZB) and wurtzite (WZ) crystal structures.
| Original language | American English |
|---|---|
| Pages | 293-294 |
| Number of pages | 2 |
| State | Published - 2000 |
| Event | Program and NCPV Program Review Meeting 2000 - Denver, Colorado Duration: 16 Apr 2000 → 19 Apr 2000 |
Conference
| Conference | Program and NCPV Program Review Meeting 2000 |
|---|---|
| City | Denver, Colorado |
| Period | 16/04/00 → 19/04/00 |
NREL Publication Number
- NREL/CP-590-28291
Keywords
- amorphous Si
- applications
- cadmium telluride (CdTe) photovoltaic solar cells modules
- components
- concentrators
- copper indium diselenide (CIS)
- crystalline silicon (x-Si) (c-Si)
- manufacturing
- markets
- NCPV
- photovoltaics (PV)
- research and development (R&D)
- systems
- systems integration
- thin films
