Zinc Oxide (ZnO) and Bandgap Engineering for Photoelectrochemical Splitting of Water to Produce Hydrogen

Sudhakar Shet; Yanfa Yan; Heli Wang; Nuggehalli Ravindra; John Turner; Mowafak Al-Jassim

doi:10.1002/9781118511350.ch24

Zinc Oxide (ZnO) and Bandgap Engineering for Photoelectrochemical Splitting of Water to Produce Hydrogen

Sudhakar Shet, Yanfa Yan, Heli Wang, Nuggehalli Ravindra, John Turner, Mowafak Al-Jassim

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

We report material synthesis, characterization, and photoelectrochemical (PEC) measurements to explore methods to effectively reduce the band gap of ZnO for the application of PEC water splitting. We find that the band gap reduction of ZnO can be achieved by N and Cu incorporation into ZnO. We demonstrate that heavy Cu-incorporation lead to both p-type doping and band gap significantly reduced ZnO thin films. The p-type conductivity in our ZnO:Cu films is clearly revealed by Mott-Schottky plots. We further have successfully synthesized ZnO:N thin films with various reduced band gaps by reactive RF magnetron sputtering. The band gap reduction and photoresponse with visible light for N- and Cu-incorporated ZnO thin films are demonstrated.

Original language	American English
Pages	231-236
Number of pages	6
DOIs	https://doi.org/10.1002/9781118511350.ch24 https://doi.org/10.1002/9781118511350.ch24
State	Published - 2012
Event	Advances and Applications in Electroceramics II - Materials Science and Technology 2011 Conference and Exhibition, MS and T 2011 - Columbus, OH, United States Duration: 16 Oct 2011 → 20 Oct 2011

Conference

Conference	Advances and Applications in Electroceramics II - Materials Science and Technology 2011 Conference and Exhibition, MS and T 2011
Country/Territory	United States
City	Columbus, OH
Period	16/10/11 → 20/10/11

NREL Publication Number

NREL/CP-5200-57691

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Shet, S., Yan, Y., Wang, H., Ravindra, N., Turner, J., & Al-Jassim, M. (2012). Zinc Oxide (ZnO) and Bandgap Engineering for Photoelectrochemical Splitting of Water to Produce Hydrogen. 231-236. Paper presented at Advances and Applications in Electroceramics II - Materials Science and Technology 2011 Conference and Exhibition, MS and T 2011, Columbus, OH, United States. https://doi.org/10.1002/9781118511350.ch24, https://doi.org/10.1002/9781118511350.ch24

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title = "Zinc Oxide (ZnO) and Bandgap Engineering for Photoelectrochemical Splitting of Water to Produce Hydrogen",

abstract = "We report material synthesis, characterization, and photoelectrochemical (PEC) measurements to explore methods to effectively reduce the band gap of ZnO for the application of PEC water splitting. We find that the band gap reduction of ZnO can be achieved by N and Cu incorporation into ZnO. We demonstrate that heavy Cu-incorporation lead to both p-type doping and band gap significantly reduced ZnO thin films. The p-type conductivity in our ZnO:Cu films is clearly revealed by Mott-Schottky plots. We further have successfully synthesized ZnO:N thin films with various reduced band gaps by reactive RF magnetron sputtering. The band gap reduction and photoresponse with visible light for N- and Cu-incorporated ZnO thin films are demonstrated.",

author = "Sudhakar Shet and Yanfa Yan and Heli Wang and Nuggehalli Ravindra and John Turner and Mowafak Al-Jassim",

year = "2012",

doi = "10.1002/9781118511350.ch24",

language = "American English",

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note = "Advances and Applications in Electroceramics II - Materials Science and Technology 2011 Conference and Exhibition, MS and T 2011 ; Conference date: 16-10-2011 Through 20-10-2011",

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Shet, S, Yan, Y, Wang, H, Ravindra, N, Turner, J & Al-Jassim, M 2012, 'Zinc Oxide (ZnO) and Bandgap Engineering for Photoelectrochemical Splitting of Water to Produce Hydrogen', Paper presented at Advances and Applications in Electroceramics II - Materials Science and Technology 2011 Conference and Exhibition, MS and T 2011, Columbus, OH, United States, 16/10/11 - 20/10/11 pp. 231-236. https://doi.org/10.1002/9781118511350.ch24, https://doi.org/10.1002/9781118511350.ch24

Zinc Oxide (ZnO) and Bandgap Engineering for Photoelectrochemical Splitting of Water to Produce Hydrogen. / Shet, Sudhakar; Yan, Yanfa; Wang, Heli et al.
2012. 231-236 Paper presented at Advances and Applications in Electroceramics II - Materials Science and Technology 2011 Conference and Exhibition, MS and T 2011, Columbus, OH, United States.

Research output: Contribution to conference › Paper › peer-review

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AB - We report material synthesis, characterization, and photoelectrochemical (PEC) measurements to explore methods to effectively reduce the band gap of ZnO for the application of PEC water splitting. We find that the band gap reduction of ZnO can be achieved by N and Cu incorporation into ZnO. We demonstrate that heavy Cu-incorporation lead to both p-type doping and band gap significantly reduced ZnO thin films. The p-type conductivity in our ZnO:Cu films is clearly revealed by Mott-Schottky plots. We further have successfully synthesized ZnO:N thin films with various reduced band gaps by reactive RF magnetron sputtering. The band gap reduction and photoresponse with visible light for N- and Cu-incorporated ZnO thin films are demonstrated.

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Y2 - 16 October 2011 through 20 October 2011

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Shet S, Yan Y, Wang H, Ravindra N, Turner J , Al-Jassim M. Zinc Oxide (ZnO) and Bandgap Engineering for Photoelectrochemical Splitting of Water to Produce Hydrogen. 2012. Paper presented at Advances and Applications in Electroceramics II - Materials Science and Technology 2011 Conference and Exhibition, MS and T 2011, Columbus, OH, United States. doi: 10.1002/9781118511350.ch24, 10.1002/9781118511350.ch24

Zinc Oxide (ZnO) and Bandgap Engineering for Photoelectrochemical Splitting of Water to Produce Hydrogen

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