Zn-Se-Cd-S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface

Ingrid Repins, Marcus Bar, Lothar Weinhardt, Jan-Hendrik Alsmeier, Sujitra Pookpanratana, Monika Blum, Wanli Yang, Clemens Heske, Regan Wilks, Rommel Noufi

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The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a "redistribution" of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Zn-terminated CZTSe absorber and Cd and S from the buffer layer form a Zn-Se-Cd-S interlayer. We find direct indications for the presence of Cd-S, Cd-Se, and Cd-Se-Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)-(Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.

Original languageAmerican English
Pages (from-to)1632-1640
Number of pages9
JournalACS Energy Letters
Issue number7
StatePublished - 14 Jul 2017

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

NREL Publication Number

  • NREL/JA-5J00-69109


  • absorbers
  • buffer layers
  • chemical structure
  • interlayers


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