Zn-Se-Cd-S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface

Ingrid Repins; Marcus Bar; Lothar Weinhardt; Jan-Hendrik Alsmeier; Sujitra Pookpanratana; Monika Blum; Wanli Yang; Clemens Heske; Regan Wilks; Rommel Noufi

doi:10.1021/acsenergylett.7b00140

Zn-Se-Cd-S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface

Ingrid Repins
, Marcus Bar
, Lothar Weinhardt
, Jan-Hendrik Alsmeier
, Sujitra Pookpanratana
, Monika Blum
, Wanli Yang
, Clemens Heske
, Regan Wilks
, Rommel Noufi

Materials Science

Research output: Contribution to journal › Article › peer-review

31 Scopus Citations

Abstract

The chemical structure of the CdS/Cu₂ZnSnSe₄ (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a "redistribution" of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Zn-terminated CZTSe absorber and Cd and S from the buffer layer form a Zn-Se-Cd-S interlayer. We find direct indications for the presence of Cd-S, Cd-Se, and Cd-Se-Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)-(Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.

Original language	American English
Pages (from-to)	1632-1640
Number of pages	9
Journal	ACS Energy Letters
Volume	2
Issue number	7
DOIs	https://doi.org/10.1021/acsenergylett.7b00140 https://doi.org/10.1021/acsenergylett.7b00140
State	Published - 14 Jul 2017

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

NLR Publication Number

NREL/JA-5J00-69109

Keywords

absorbers
buffer layers
chemical structure
interlayers

Access to Document

https://www.nrel.gov/docs/fy17osti/69109.pdf

Cite this

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title = "Zn-Se-Cd-S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface",

abstract = "The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a {"}redistribution{"} of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Zn-terminated CZTSe absorber and Cd and S from the buffer layer form a Zn-Se-Cd-S interlayer. We find direct indications for the presence of Cd-S, Cd-Se, and Cd-Se-Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)-(Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.",

keywords = "absorbers, buffer layers, chemical structure, interlayers",

author = "Ingrid Repins and Marcus Bar and Lothar Weinhardt and Jan-Hendrik Alsmeier and Sujitra Pookpanratana and Monika Blum and Wanli Yang and Clemens Heske and Regan Wilks and Rommel Noufi",

note = "Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

month = jul,

day = "14",

doi = "10.1021/acsenergylett.7b00140",

language = "American English",

volume = "2",

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TY - JOUR

T1 - Zn-Se-Cd-S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface

AU - Repins, Ingrid

AU - Bar, Marcus

AU - Weinhardt, Lothar

AU - Alsmeier, Jan-Hendrik

AU - Pookpanratana, Sujitra

AU - Blum, Monika

AU - Yang, Wanli

AU - Heske, Clemens

AU - Wilks, Regan

AU - Noufi, Rommel

PY - 2017/7/14

Y1 - 2017/7/14

N2 - The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a "redistribution" of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Zn-terminated CZTSe absorber and Cd and S from the buffer layer form a Zn-Se-Cd-S interlayer. We find direct indications for the presence of Cd-S, Cd-Se, and Cd-Se-Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)-(Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.

AB - The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a "redistribution" of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Zn-terminated CZTSe absorber and Cd and S from the buffer layer form a Zn-Se-Cd-S interlayer. We find direct indications for the presence of Cd-S, Cd-Se, and Cd-Se-Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)-(Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.

KW - absorbers

KW - buffer layers

KW - chemical structure

KW - interlayers

UR - https://www.scopus.com/pages/publications/85033700974

U2 - 10.1021/acsenergylett.7b00140

DO - 10.1021/acsenergylett.7b00140

M3 - Article

AN - SCOPUS:85033700974

SN - 2380-8195

VL - 2

SP - 1632

EP - 1640

JO - ACS Energy Letters

JF - ACS Energy Letters

IS - 7

ER -

Zn-Se-Cd-S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface

Abstract

Bibliographical note

NLR Publication Number

Keywords

Access to Document

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