Zn3P2 as an Improved Semiconductor for Photovoltaic Solar Cells: Final Report, 1 April 1983 - 31 March 1984; A Subcontract Report

    Research output: NRELSubcontract Report

    Abstract

    Development efforts have been made on two heterojunctions with Zn3P2; namely, Zn3P2/ ZnSe and An3P2/ (CdZn)S. In both cases, improved open-circuit voltages were achieved, but control of the material properties of the heterojunction partner has limited short- circuit currents and overall efficiency. In the case of ZnSe, the high resistivities of deposited thin-films were efficiency-limiting on alldevices. In the case of (CdZn)S, it is concluded that high interface recombination rates are controlling the short-circuit current and limiting the overall efficiency. A more fundamental study of the Zn3P2/(CdAn)S heterojunction will be necessary in order to make further optimization of this device possible.
    Original languageAmerican English
    Number of pages59
    StatePublished - 1985

    Bibliographical note

    Work performed by Institute of Energy Conversion, University of Delaware, Newark, Delaware

    NREL Publication Number

    • NREL/STR-211-2515

    Keywords

    • doped materials
    • efficiency
    • electric conductivity
    • solar cells
    • zinc phosphides
    • zinc selenides

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