ZnGeAs2 Thin Films Properties: A Potentially Useful Semiconductor for Photovoltaic Applications

T. J. Peshek; Z. Tang; L. Zhang; R. K. Singh; B. To; T. A. Gessert; T. J. Coutts; N. Newman; M. Van Schilfgaarde

doi:10.1109/pvsc.2009.5411281

ZnGeAs2 Thin Films Properties: A Potentially Useful Semiconductor for Photovoltaic Applications

T. J. Peshek, Z. Tang, L. Zhang, R. K. Singh, B. To, T. A. Gessert, T. J. Coutts, N. Newman, M. Van Schilfgaarde

Research output: Contribution to conference › Paper › peer-review

9 Scopus Citations

Abstract

We have studied the chalcopyrite compound ZnGeAs₂ to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser depositionThe films are deposited at 315 °C and are amorphous. They crystallize above 450 °C and improve in crystallinity up to and including 600 °C. At that temperature the Hall mobility is 55 ± 2 cm²√Vs , which is within uncertainty to the highest mobility ever reported for this material. We find a rather high carrier concentration, of order 10¹⁸ - 10¹⁹ for the annealed films, presumably due to the presence of Zn vacancies. The material is an effective light absorber, with an absorption coefficient of order 10⁴ 1/cm at 1.2 eV. These properties suggest ZnGeAs₂ may be used to produce cost effective and efficient solar cells.

Original language	American English
Pages	1367-1369
Number of pages	3
DOIs	https://doi.org/10.1109/pvsc.2009.5411281 https://doi.org/10.1109/PVSC.2009.5411281
State	Published - 2009
Externally published	Yes
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009

Conference

Conference	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	7/06/09 → 12/06/09

NREL Publication Number

NREL/CP-520-48025

Keywords

photovoltaics
thin films

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Peshek, T. J., Tang, Z., Zhang, L., Singh, R. K., To, B., Gessert, T. A., Coutts, T. J., Newman, N., & Van Schilfgaarde, M. (2009). ZnGeAs2 Thin Films Properties: A Potentially Useful Semiconductor for Photovoltaic Applications. 1367-1369. Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States. https://doi.org/10.1109/pvsc.2009.5411281, https://doi.org/10.1109/PVSC.2009.5411281

@conference{4b357a49f26c49639edd4ae704a0aa30,

title = "ZnGeAs2 Thin Films Properties: A Potentially Useful Semiconductor for Photovoltaic Applications",

abstract = "We have studied the chalcopyrite compound ZnGeAs2 to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser depositionThe films are deposited at 315 °C and are amorphous. They crystallize above 450 °C and improve in crystallinity up to and including 600 °C. At that temperature the Hall mobility is 55 ± 2 cm2√Vs , which is within uncertainty to the highest mobility ever reported for this material. We find a rather high carrier concentration, of order 1018 - 1019 for the annealed films, presumably due to the presence of Zn vacancies. The material is an effective light absorber, with an absorption coefficient of order 104 1/cm at 1.2 eV. These properties suggest ZnGeAs2 may be used to produce cost effective and efficient solar cells.",

keywords = "photovoltaics, thin films",

author = "Peshek, {T. J.} and Z. Tang and L. Zhang and Singh, {R. K.} and B. To and Gessert, {T. A.} and Coutts, {T. J.} and N. Newman and {Van Schilfgaarde}, M.",

year = "2009",

doi = "10.1109/pvsc.2009.5411281",

language = "American English",

pages = "1367--1369",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Peshek, TJ, Tang, Z, Zhang, L, Singh, RK, To, B, Gessert, TA, Coutts, TJ, Newman, N & Van Schilfgaarde, M 2009, 'ZnGeAs2 Thin Films Properties: A Potentially Useful Semiconductor for Photovoltaic Applications', Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 7/06/09 - 12/06/09 pp. 1367-1369. https://doi.org/10.1109/pvsc.2009.5411281, https://doi.org/10.1109/PVSC.2009.5411281

TY - CONF

T1 - ZnGeAs2 Thin Films Properties: A Potentially Useful Semiconductor for Photovoltaic Applications

AU - Peshek, T. J.

AU - Tang, Z.

AU - Zhang, L.

AU - Singh, R. K.

AU - To, B.

AU - Gessert, T. A.

AU - Coutts, T. J.

AU - Newman, N.

AU - Van Schilfgaarde, M.

PY - 2009

Y1 - 2009

N2 - We have studied the chalcopyrite compound ZnGeAs2 to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser depositionThe films are deposited at 315 °C and are amorphous. They crystallize above 450 °C and improve in crystallinity up to and including 600 °C. At that temperature the Hall mobility is 55 ± 2 cm2√Vs , which is within uncertainty to the highest mobility ever reported for this material. We find a rather high carrier concentration, of order 1018 - 1019 for the annealed films, presumably due to the presence of Zn vacancies. The material is an effective light absorber, with an absorption coefficient of order 104 1/cm at 1.2 eV. These properties suggest ZnGeAs2 may be used to produce cost effective and efficient solar cells.

AB - We have studied the chalcopyrite compound ZnGeAs2 to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser depositionThe films are deposited at 315 °C and are amorphous. They crystallize above 450 °C and improve in crystallinity up to and including 600 °C. At that temperature the Hall mobility is 55 ± 2 cm2√Vs , which is within uncertainty to the highest mobility ever reported for this material. We find a rather high carrier concentration, of order 1018 - 1019 for the annealed films, presumably due to the presence of Zn vacancies. The material is an effective light absorber, with an absorption coefficient of order 104 1/cm at 1.2 eV. These properties suggest ZnGeAs2 may be used to produce cost effective and efficient solar cells.

KW - photovoltaics

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=77951526928&partnerID=8YFLogxK

U2 - 10.1109/pvsc.2009.5411281

DO - 10.1109/pvsc.2009.5411281

M3 - Paper

AN - SCOPUS:77951526928

SP - 1367

EP - 1369

T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

Y2 - 7 June 2009 through 12 June 2009

ER -

ZnGeAs2 Thin Films Properties: A Potentially Useful Semiconductor for Photovoltaic Applications

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