ZnGeAs2 Thin Films Properties: A Potentially Useful Semiconductor for Photovoltaic Applications

T. J. Peshek, Z. Tang, L. Zhang, R. K. Singh, B. To, T. A. Gessert, T. J. Coutts, N. Newman, M. Van Schilfgaarde

Research output: Contribution to conferencePaperpeer-review

8 Scopus Citations

Abstract

We have studied the chalcopyrite compound ZnGeAs2 to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser depositionThe films are deposited at 315 °C and are amorphous. They crystallize above 450 °C and improve in crystallinity up to and including 600 °C. At that temperature the Hall mobility is 55 ± 2 cm2√Vs , which is within uncertainty to the highest mobility ever reported for this material. We find a rather high carrier concentration, of order 1018 - 1019 for the annealed films, presumably due to the presence of Zn vacancies. The material is an effective light absorber, with an absorption coefficient of order 104 1/cm at 1.2 eV. These properties suggest ZnGeAs2 may be used to produce cost effective and efficient solar cells.

Original languageAmerican English
Pages1367-1369
Number of pages3
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 7 Jun 200912 Jun 2009

Conference

Conference2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA
Period7/06/0912/06/09

NREL Publication Number

  • NREL/CP-520-48025

Keywords

  • photovoltaics
  • thin films

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