ZnO:Al Doping Level and Hydrogen Growth Ambient Effects on CIGS Solar Cell Performance: Preprint

Research output: Contribution to conferencePaper


Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) cells require a highly conducting and transparent electrode for optimum device performance. ZnO:Al films grown from targets containing 2.0 wt.% Al2O3 are commonly used for this purpose. Maximum carrier mobilities of these films grown at room temperature are~20-25 cm2V-1s-1. Therefore, relatively high carrier concentrations are required to achieve the desiredconductivity, which leads to free carrier absorption in the near infrared (IR). Lightly doped films (0.05 - 0.2 wt.% Al2O3), which show less IR absorption, reach mobility values greater than 50 cm2V-1s-1 when deposited in H2 partial pressure. We incorporate these lightly doped ZnO:Al layers into CIGS PV cells produced at the National Renewable Energy Laboratory (NREL). Preliminary results showquantum efficiency values of these cells rival those of a past world-record cell produced at NREL that used 2.0 wt.% Al-doped ZnO films. The highest cell efficiency obtained in this trial was 18.1%.
Original languageAmerican English
Number of pages8
StatePublished - 2008
Event33rd IEEE Photovoltaic Specialists Conference - San Diego, California
Duration: 11 May 200816 May 2008


Conference33rd IEEE Photovoltaic Specialists Conference
CitySan Diego, California

NREL Publication Number

  • NREL/CP-520-42537


  • carrier concentration
  • devices
  • hydrogen
  • optimum performance
  • PV
  • quantum efficiency (QE)
  • transparent electrodes


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