ZnO/Cu(InGa)Se2 Solar Cells Prepared by Vapor Phase Zn Doping

NREL (Inventor)

    Research output: Patent


    A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositihng Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate tol a temperature range between about 100..deg..C to about 250..deg..C; subjecting theleated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound evaporant species treated layer of Cu(InGa)Se2.
    Original languageAmerican English
    Patent number7,179,677 B2
    StatePublished - 2007

    NREL Publication Number

    • NREL/PT-520-41408


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