Abstract
A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositihng Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate tol a temperature range between about 100..deg..C to about 250..deg..C; subjecting theleated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound evaporant species treated layer of Cu(InGa)Se2.
| Original language | American English |
|---|---|
| Patent number | 7,179,677 B2 |
| State | Published - 2007 |
NREL Publication Number
- NREL/PT-520-41408