Abstract
The ability to produce high-performance CdS/CdTe photovoltaic (PV) devices that incorporate high-transparency back contacts for multijunction thin-film PV applications will require an even greater level of understanding than has been required for single-junction devices. This study reports some of our initial investigations at NREL to modify the ZnTe:Cu contact process previously developed forsingle-junction applications for optimal use as a transparent back contact. We have succeeded in producing devices incorporating a transparent ZnTe:Cu/ITO/metal-grid contact that demonstrates nominally identical light I-V (LIV) performance to the ZnTe:Cu/Ti contact used in single-junction devices. However, we have determined that the transparent conducting oxide (TCO), CdS, CdTe, and ZnTe:Culayers are all factors in the optical absorption within the device. Finally, we have concluded that optimizing the transparent ZnTe:Cu contact for use with NREL-produced device material will require a more detailed understanding of the evolution of the junction region during the contact process.
Original language | American English |
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Number of pages | 7 |
State | Published - 2003 |
Event | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003 |
Conference
Conference | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting |
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City | Denver, Colorado |
Period | 24/03/03 → 26/03/03 |
NREL Publication Number
- NREL/CP-520-33572
Keywords
- CdS/CdTe
- solar cell designs
- thin films
- transparent back contacts